The world's first 128GB 20nm NAND Flash

IMFT (Intel Micron Flash Technology), the Company partners Intel and Micron announced that it has been able to produce chips with a capacity of 128 GB Flash NAND with very small size of 20nm (nano meters).

IMFT is currently mass producing for type 64 Gb, while the latest product is a development of previous products and is still in testing phase.

For the 64Gb version uses 8192 bytes page while the 128GB version will increase to 16,384 bytes in page, consequently, the controller and drive firmware must be modified to accommodate the new page size. 128GB Flash chips will use the interface (Open NAND Flash Interface) ONFI 3.0 that will increase his speed to a maximum of 333 MT / s (MegaTransfer per Second).

In addition to the capacity and speed, another important property of the flash memory is durability, both 64GB and 128GB have been using the technology of multi-level cell (MLC), which is the method of data storage in each cell. each cell has a single flash / Flash, the smallest flash each is responsible for storing only a single value.





Flash chip using 20nm gate Hi-K/metal design that allows it to make transistors smaller with good durability. IMFT Hi-K/metal claimed that the use of the first gate is in use for the production of NAND flash.

For the type of 64Gb will start on the market in the middle of next year, while it took longer to produce the type of 128 Gb. The new 128GB is estimated to be in mass production in the first half of next year, and will be marketed in 2013.

Intel also plans to introduce a SSD (Solid State Drive) with 20nm NAND capacity of 2 Terabytes with the target market and Ultrabook tablet computer.
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